MECHANISM FOR CUPT-TYPE ORDERING IN MIXED III-V EPITAXIAL LAYERS

被引:109
作者
PHILIPS, BA
NORMAN, AG
SEONG, TY
MAHAJAN, S
BOOKER, GR
SKOWRONSKI, M
HARBISON, JP
KERAMIDAS, VG
机构
[1] CARNEGIE MELLON UNIV,DEPT MAT SCI,PITTSBURGH,PA 15213
[2] BELLCORE,RED BANK,NJ 07701
[3] UNIV OXFORD,DEPT MAT,OXFORD OX1 3PH,ENGLAND
关键词
D O I
10.1016/0022-0248(94)90297-6
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
摘要
A model is proposed to rationalize the occurrence of CuPt-type ordering in mixed III-V epitaxial layers grown on (001) substrates. It is invoked that 2 X surface reconstruction occurring on group V terminated (001) surfaces produces dilated and compressed regions in sub-surface layers. The presence of these regions biases the occupation of certain sites during the growth of a layer consisting of atoms differing in their tetrahedral radii. By assuming that the reconstruction always occurs at the growing surface, it is possible to explain the evolution of CuPt-type ordering in epitaxial layers. Also, based on the model, experimental observations pertaining to the influence of growth conditions, surface misorientation and steps on ordering can be rationalized.
引用
收藏
页码:249 / 263
页数:15
相关论文
共 63 条
[1]   THEORY OF RECONSTRUCTION INDUCED SUBSURFACE STRAIN - APPLICATION TO SI(100) [J].
APPELBAUM, JA ;
HAMANN, DR .
SURFACE SCIENCE, 1978, 74 (01) :21-33
[2]  
AUGARDE E, 1989, INST PHYS CONF SER, V100, P155
[3]  
BAXTER CS, 1991, I PHYS C SER, V117, P469
[4]   SUBSTRATE-DRIVEN ORDERING MICROSTRUCTURE IN GAXIN1-XP ALLOYS [J].
BELLON, P ;
CHEVALIER, JP ;
AUGARDE, E ;
ANDRE, JP ;
MARTIN, GP .
JOURNAL OF APPLIED PHYSICS, 1989, 66 (06) :2388-2394
[5]   CHEMICAL ORDERING IN GAXIN1-XP SEMICONDUCTOR ALLOY GROWN BY METALORGANIC VAPOR-PHASE EPITAXY [J].
BELLON, P ;
CHEVALIER, JP ;
MARTIN, GP ;
DUPONTNIVET, E ;
THIEBAUT, C ;
ANDRE, JP .
APPLIED PHYSICS LETTERS, 1988, 52 (07) :567-569
[6]   ORDERING OF ISOVALENT INTERSEMICONDUCTOR ALLOYS [J].
BERNARD, JE ;
FERREIRA, LG ;
WEI, SH ;
ZUNGER, A .
PHYSICAL REVIEW B, 1988, 38 (09) :6338-6341
[7]   SPONTANEOUS SURFACE-INDUCED LONG-RANGE ORDER IN GA0.5IN0.5P ALLOYS [J].
BERNARD, JE ;
FROYEN, S ;
ZUNGER, A .
PHYSICAL REVIEW B, 1991, 44 (20) :11178-11195
[8]   SURFACE STABILITY OF ORDERED LATTICE-MISMATCHED III-V ALLOYS [J].
BOGUSLAWSKI, P .
PHYSICAL REVIEW B, 1990, 42 (06) :3737-3740
[9]   EFFECT OF GROWTH-RATE ON PROPERTIES OF GA0.51IN0.49P GROWN BY ORGANOMETALLIC VAPOR-PHASE EPITAXY [J].
CAO, DS ;
REIHLEN, EH ;
CHEN, GS ;
KIMBALL, AW ;
STRINGFELLOW, GB .
JOURNAL OF CRYSTAL GROWTH, 1991, 109 (1-4) :279-284
[10]   ATOMIC-STRUCTURE OF GAAS(100)-(2X1) AND GAAS(100)-(2X4) RECONSTRUCTED SURFACES [J].
CHADI, DJ .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1987, 5 (04) :834-837