A HIGH-RESOLUTION SILICON DRIFT CHAMBER FOR X-RAY SPECTROSCOPY

被引：20

作者：

GAUTHIER, C

GOULON, J

MOGUILINE, E

ELLEAUME, P

FEITE, S

GABURRO, Z

LONGONI, A

GATTI, E

DRESSLER, P

LAMPERT, MO

HENCK, R

机构：

[1] POLITECN MILAN,IST FIS,I-20133 MILAN,ITALY

[2] DEPT INSTRUMENTAT & SYST NUCL,F-67383 LINGOLSHEIM,FRANCE

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT | 1994年 / 349卷 / 01期

关键词：

D O I：

10.1016/0168-9002(94)90629-7

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

Silicon drift chambers are very attractive detectors for X-ray fluorescence excitation spectroscopy (between 1 and 15 keV) due to their ultra low capacitance (typically 200 fF) which is also independent of the detector active area. High-energy resolution can be obtained while preserving a large solid detection angle. We have designed a new silicon drift chamber for X-ray spectroscopy. The active area is 1 cm(2), the measured energy resolution is 143 eV FWHM for the K alpha line of Mn (5.89 keV). This detector has also been used to characterize the spectral line shape of the emission of a standard planar undulator installed on the ESRF 6 GeV storage ring.

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收藏

页码：258 / 262

页数：5

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