ELECTRONIC-PROPERTIES OF N-SI(111) DURING ELECTROCHEMICAL SURFACE TRANSFORMATION TOWARD H-TERMINATION

被引：15

作者：

DITTRICH, T

RAUSCHER, S

BITZER, T

AGGOUR, M

FLIETNER, H

LEWERENZ, HJ

机构：

[1] HAHN MEITNER INST BERLIN GMBH,GRENZFLACHEN ABT,D-14109 BERLIN,GERMANY

[2] UNIV LIVERPOOL,IRC SURFACE SCI,LIVERPOOL L69 3BX,MERSEYSIDE,ENGLAND

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1995年 / 142卷 / 07期

关键词：

D O I：

10.1149/1.2044311

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

The electronic properties of an n-Si(111) surface during the electrochemical H termination process are investigated by the use of the large signal surface photovoltage technique. A strong decrease of the density of interface states up to 2 10(11) eV(-1) cm(-2) and the development of a positive fixed charge at the interface is observed in connection with a decrease of the oxidation state of surface Si atoms. The results are interpreted by surface smoothing concurrent with the hydrogenation of the surface.

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页码：2411 / 2413

页数：3

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