CALCULATION OF DEFECT STATES IN AMORPHOUS SELENIUM

被引:33
作者
VANDERBILT, D
JOANNOPOULOS, JD
机构
[1] Department of Physics, Center for Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge
关键词
D O I
10.1103/PhysRevLett.42.1012
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
Self-consistent pseudopotential and tight-binding techniques are used to study glassy Se. Both onefold and threefold corrdinated defects give rise to nondegenerate, nonhydrogenic gap states. The former state arises from an interaction, unique to the chalcogenides, between a dangling bond and a neighboring lone pair. The latter state is surprisingly delocalized, involving interactions between many orbitals. It is shown that defect electronic configurations, and repulsive interatomic terms, are crucial to the calculation of total energies. © 1979 The American Physical Society.
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页码:1012 / 1015
页数:4
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