IONIC-CONDUCTIVITY OF THE SYSTEM SI-AL-O-N FROM 850-DEGREES TO 1400-DEGREES-C

被引：5

作者：

UKYO, Y ^{[1
]}

GOTO, KS ^{[1
]}

INOMATA, Y ^{[1
]}

机构：

[1] NATL INST RES INORGAN MAT,NIIHARI,IBARAKI 30031,JAPAN

来源：

JOURNAL OF THE AMERICAN CERAMIC SOCIETY | 1979年 / 62卷 / 7-8期

关键词：

D O I：

10.1111/j.1151-2916.1979.tb19090.x

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Electrical conductivity was measured from 850° to 1400°C for β‐sialon and pure X phase as well as for the sintered system Si3N4‐Al2O3, containing β‐sialon, X phase, β‐Si3N4, and glassy phase. Ionic conductivity was measured at >1000°C. The charge carriers were identified by electrolysis. The results showed that pure β‐sialon is ionically conducting because of Si4+ migration for the temperature range studied. Pure X phase shows ionic conduction by Si4+ above 1000°; below 1000°C, it shows electronic conduction because of impurities. The conductivity of the sintered system Si3N4‐Al2O3 containing β‐sialon, β‐Si3N4 X phase, and glassy phase changes as the relative quantities of β ‐sialon and X phase change. The apparent activation energies for the ionic and electronic conductivities are 45 and 20 kcal/mol, respectively. Copyright © 1979, Wiley Blackwell. All rights reserved

引用

页码：410 / 413

页数：4

共 11 条

[1]

Deeley G.G., 1961, POWDER METALL, V4, P145, DOI [10.1179/pom.1961.4.8.011, DOI 10.1179/POM.1961.4.8.011]

[2]

DEVILLE H, 1857, J LEIBIGS ANN CHEM, V104, P256

[3] CONTRIBUTION TO PHASE-DIAGRAM SI3N4-ALN-AL2O3-SIO2 [J].