GIANT ANISOTROPIC MAGNETORESISTANCE AND EXCESS RESISTIVITY IN AMORPHOUS U1-XSBX FERROMAGNETS

被引：11

作者：

FREITAS, PP

PLASKETT, TS

机构：

[1] INST ENGN SIST & COMP,P-1000 LISBON,PORTUGAL

[2] IBM CORP,THOMAS J WATSON RES CTR,DIV RES,YORKTOWN HTS,NY 10598

来源：

PHYSICAL REVIEW LETTERS | 1990年 / 64卷 / 18期

关键词：

D O I：

10.1103/PhysRevLett.64.2184

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

U1-xSbx amorphous ferromagnets were prepared that show a magnetoresistance anisotropy (AMR) reaching 26% at 10 K, in a 50 kOe field. This is a striking result, since the AMR of typical amorphous ferromagnets does not exceed 1%. Large excess resistivity caused by domain walls is found to scale with 2, where is the tangent of the Hall angle. © 1990 The American Physical Society.

引用

页码：2184 / 2187

页数：4

共 22 条

[1] EXCESS RESISTANCE AND COLLECTIVE MOTION OF FERROMAGNETIC DOMAIN-WALLS IN AMORPHOUS FE5.85 CO72.15 MO2 B-15 SI5 RIBBONS TRAVERSED BY DC ELECTRIC CURRENTS [J].