ALUMINUM-ALLOY METALLIZATION FOR INTEGRATED-CIRCUITS

被引:8
作者
GHATE, PB
机构
关键词
D O I
10.1016/0040-6090(81)90666-0
中图分类号
T [工业技术];
学科分类号
08 ;
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页码:195 / 205
页数:11
相关论文
共 12 条
[1]  
AMES I, 1970, IBM J RES DEV, V14, P46
[2]   EFFECT OF VACUUM AMBIENCE ON AL-SI CONTACTS [J].
BLAIR, JC ;
GHATE, PB .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1977, 14 (01) :79-84
[3]  
DHEURLE FM, 1978, THIN FILMS INTERDIFF, P234
[4]   A 1-MU-M BIPOLAR VLSI TECHNOLOGY [J].
EVANS, SA ;
MORRIS, SA ;
ARLEDGE, LA ;
ENGLADE, JO ;
FULLER, CR .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (08) :1373-1379
[5]   ELECTROMIGRATION TESTING OF TI-W-AL AND TI-W-AL-CU FILM CONDUCTORS [J].
GHATE, PB ;
BLAIR, JC .
THIN SOLID FILMS, 1978, 55 (01) :113-123
[6]   METALLIZATION IN MICROELECTRONICS [J].
GHATE, PB ;
BLAIR, JC ;
FULLER, CR .
THIN SOLID FILMS, 1977, 45 (01) :69-84
[7]  
GHATE PB, 1971, RADC71186 ROM AIR DE
[8]  
GHATE PB, 1980, RADC80328 ROM AIR DE
[9]   EVOLUTION AND CURRENT STATUS OF ALUMINUM METALLIZATION [J].
LEARN, AJ .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1976, 123 (06) :894-906
[10]  
LEARN AJ, 1976, J ELECTRON MATER, V5, P531