MODELING OF ELECTROABSORPTION IN SEMICONDUCTOR QUANTUM STRUCTURES WITHIN THE 8-BAND K-CENTER-DOT-P THEORY

被引:12
作者
PISTOL, ME
GERSHONI, D
机构
[1] TECHNION ISRAEL INST TECHNOL,INST SOLID STATE,IL-32000 HAIFA,ISRAEL
[2] LUND UNIV,DEPT SOLID STATE PHYS,S-22100 LUND,SWEDEN
来源
PHYSICAL REVIEW B | 1994年 / 50卷 / 16期
关键词
D O I
10.1103/PhysRevB.50.11738
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We have incorporated electric fields into the eight-band kp theory, which we have applied to heterostructures, in conjunction with the envelope-function approximation. We use the method of Baraff and Gershoni to implement the electric-field effects in a computer program that calculates the optical properties of direct-band-gap heterostructures in one, two, and three dimensions. Using this method, we calculate the interband and intersubband electroabsorption of multiple quantum wells as well as the interband electroabsorption in superlattices. We illustrate the evolution of the Stark localization of the electron wave function under the application of an external electric field in superlattices. Comparison with experimental data, available in the literature, exhibits very good agreement between theory and experiment, with respect to the spectral shape, the absolute magnitude, and the electric-field dependence of the absorption. © 1994 The American Physical Society.
引用
收藏
页码:11738 / 11745
页数:8
相关论文
共 35 条
[1]   8-BANK K.P MODEL OF STRAINED ZINCBLENDE CRYSTALS [J].
BAHDER, TB .
PHYSICAL REVIEW B, 1990, 41 (17) :11992-12001
[2]   EIGENFUNCTION-EXPANSION METHOD FOR SOLVING THE QUANTUM-WIRE PROBLEM - FORMULATION [J].
BARAFF, GA ;
GERSHONI, D .
PHYSICAL REVIEW B, 1991, 43 (05) :4011-4022
[3]   QUANTUM-CONFINED STARK-EFFECT IN INGAAS INP QUANTUM-WELLS GROWN BY ORGANOMETALLIC VAPOR-PHASE EPITAXY [J].
BARJOSEPH, I ;
KLINGSHIRN, C ;
MILLER, DAB ;
CHEMLA, DS ;
KOREN, U ;
MILLER, BI .
APPLIED PHYSICS LETTERS, 1987, 50 (15) :1010-1012
[4]   ELECTRIC-FIELD INDUCED LOCALIZATION AND OSCILLATORY ELECTRO-OPTICAL PROPERTIES OF SEMICONDUCTOR SUPERLATTICES [J].
BLEUSE, J ;
BASTARD, G ;
VOISIN, P .
PHYSICAL REVIEW LETTERS, 1988, 60 (03) :220-223
[5]   RESONANT TUNNELING THROUGH DOUBLE BARRIERS, PERPENDICULAR QUANTUM TRANSPORT PHENOMENA IN SUPERLATTICES, AND THEIR DEVICE APPLICATIONS [J].
CAPASSO, F ;
MOHAMMED, K ;
CHO, AY .
IEEE JOURNAL OF QUANTUM ELECTRONICS, 1986, 22 (09) :1853-1869
[6]  
CAVVICHI RE, 1988, PHYS REV B, V38, P13474
[7]   SATURATION OF INTERSUBBAND TRANSITIONS IN P-TYPE SEMICONDUCTOR QUANTUM WELLS [J].
CHANG, YC ;
JAMES, RB .
PHYSICAL REVIEW B, 1989, 39 (17) :12672-12681
[8]   ROOM-TEMPERATURE EXCITONIC NONLINEAR ABSORPTION AND REFRACTION IN GAAS/ALGAAS MULTIPLE QUANTUM WELL STRUCTURES [J].
CHEMLA, DS ;
MILLER, DAB ;
SMITH, PW ;
GOSSARD, AC ;
WIEGMANN, W .
IEEE JOURNAL OF QUANTUM ELECTRONICS, 1984, 20 (03) :265-275
[9]   EFFECT OF ELECTRIC-FIELDS ON EXCITONS IN A COUPLED DOUBLE-QUANTUM-WELL STRUCTURE [J].
CHEN, YJ ;
KOTELES, ES ;
ELMAN, BS ;
ARMIENTO, CA .
PHYSICAL REVIEW B, 1987, 36 (08) :4562-4565
[10]   NEW K.P THEORY FOR GAAS/GA1-XALXAS-TYPE QUANTUM-WELLS [J].
EPPENGA, R ;
SCHUURMANS, MFH ;
COLAK, S .
PHYSICAL REVIEW B, 1987, 36 (03) :1554-1564