OPTICALLY DETECTED MAGNETIC-RESONANCE STUDY OF ANTISITE-TO-ACCEPTOR AND RELATED RECOMBINATION PROCESSES IN AS-GROWN INP-ZN

被引：13

作者：

ROBINS, LH

TAYLOR, PC

KENNEDY, TA

机构：

[1] UNIV UTAH,DEPT PHYS,SALT LAKE CITY,UT 84112

[2] USN,RES LAB,WASHINGTON,DC 20375

来源：

PHYSICAL REVIEW B | 1988年 / 38卷 / 18期

关键词：

D O I：

10.1103/PhysRevB.38.13227

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：13227 / 13236

页数：10

共 18 条

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[5]

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[6] AN OPTICALLY DETECTED MAGNETIC-RESONANCE INVESTIGATION OF ANTI-SITE AND VACANCY CENTERS IN INP [J].

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[7] AN INVESTIGATION OF THE 1.36 EV PHOTOLUMINESCENCE SPECTRUM OF HEAT-TREATED INP USING ZEEMAN SPECTROSCOPY AND STRAIN EFFECTS [J].

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[8] BEHAVIOR OF DONOR-ACCEPTOR RECOMBINATION EMISSION IN II-VI CRYSTALS SUBJECTED TO MAGNETIC-RESONANCE [J].

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[9] DETERMINATION OF THE PIN ANTISITE STRUCTURE IN INP BY OPTICALLY DETECTED ELECTRON-NUCLEAR DOUBLE-RESONANCE [J].

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[10] ANTI-SITE CENTERS IN E-IRRADIATED INP-ZN [J].

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