NON-OHMIC MICROWAVE CONDUCTIVITY IN SEMICONDUCTOR POSTS

被引：8

作者：

HESS, K

NIMTZ, G

SEEGER, K

机构：

[1] Institut für Angew. Physik, The University, A-1090 Wien Vienna

来源：

SOLID-STATE ELECTRONICS | 1969年 / 12卷 / 02期

关键词：

D O I：

10.1016/0038-1101(69)90115-4

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Measurements of non-ohmic microwave conductivity of semiconductors are reported, whereby non-ohmic behaviour is the consequence of a large microwave amplitude. The semi-conductor is arranged in a rectangular waveguide as a circular 'inductive post'. Incident, transmitted and reflected microwave powers are measured. From there the microwave conductivity is deduced according to a method which was quoted by Marcuvitz(5) and which is specialized on a small post diameter. This method proves itself useful in the microwave X-band for a specific resistivity of more than 1 Ω-cm and is checked against n-type silicon and n-type germanium. © 1969.

引用

页码：79 / &

共 7 条

[1]

CHAMPLIN HS, 1966, J APPL PHYS, V37, P2355

[2]

CONWELL EM, 1967, SOLIDST PHYS S, V9

[3]

FELDTKELLER R, 1943, VIERPOLTHEORIE

[4] MICROWAVE INTERACTION WITH A SEMICONDUCTOR POST [J].