EFFECT OF HOLE-LOCALIZATION MECHANISMS ON PHOTOLUMINESCENCE SPECTRA OF 2-DIMENSIONAL-ELECTRON-GAS SYSTEMS

被引：16

作者：

ZHANG, YH

LEDENTSOV, NN

PLOOG, K

机构：

[1] Max-Planck-Institut für Festkörperforschung, 7000 Stuttgart 80

来源：

PHYSICAL REVIEW B | 1991年 / 44卷 / 03期

关键词：

D O I：

10.1103/PhysRevB.44.1399

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Optical spectroscopy on a series of n-type modulation-doped Ga0.47In0.53As/Al0.48In0.52As single quantum wells reveals that the Fermi-edge singularity in luminescence occurs only if localization of photo-generated holes leads to positively charged centers. If the hole localization yields electrically neutral centers, no intensity enhancement of the luminescence near the Fermi edge is observed. The different nature or the hole-localization mechanisms consistently explains previous discrepancies in both the low-temperature luminescence and absorption spectra of Si metal-oxide-semiconductor field-effect transistors as well as of modulation-doped GaAs/AlxGa1-xAs, Ga(x)In(1-x)As/InP, and Ga(x)In(1-x)As/Al(y)In(1-y)As quantum wells and heterostructures.

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页码：1399 / 1402

页数：4

相关论文

共 13 条

[1] RADIATIVE RECOMBINATION PROCESSES AND FERMI EDGE SINGULARITY IN MODULATION DOPED N-TYPE GAINAS ALINAS MULTIPLE QUANTUM-WELLS [J].

CINGOLANI, R ;

STOLZ, W ;

ZHANG, YH ;

PLOOG, K .

JOURNAL OF LUMINESCENCE, 1990, 46 (02) :147-154

[2] ELECTRONIC STATES AND OPTICAL-TRANSITIONS IN MODULATION-DOPED N-TYPE GAXIN1-XAS ALXIN1-XAS MULTIPLE QUANTUM WELLS [J].

CINGOLANI, R ;

STOLZ, W ;

PLOOG, K .

PHYSICAL REVIEW B, 1989, 40 (05) :2950-2955

[3] FERMI-EDGE SINGULARITY IN HEAVILY DOPED GAAS MULTIPLE QUANTUM WELLS [J].

KALT, H ;

LEO, K ;

CINGOLANI, R ;

PLOOG, K .

PHYSICAL REVIEW B, 1989, 40 (17) :12017-12019

[4] OPTICAL SPECTROSCOPY OF TWO-DIMENSIONAL ELECTRONS IN GAAS-ALXGA1-XAS SINGLE HETEROJUNCTIONS [J].

KUKUSHKIN, IV ;

VONKLITZING, K ;

PLOOG, K .

PHYSICAL REVIEW B, 1988, 37 (14) :8509-8512

[5]

KUKUSHKIN IV, 1987, ZH EKSP TEOR FIZ+, V66, P613

[6] OBSERVATION OF THE FERMI EDGE ANOMALY IN THE ABSORPTION AND LUMINESCENCE SPECTRA OF N-TYPE MODULATION-DOPED GAAS-ALGAAS QUANTUM-WELLS [J].

LEE, JS ;

IWASA, Y ;

MIURA, N .

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1987, 2 (10) :675-678

[7] FREE CARRIER AND MANY-BODY EFFECTS IN ABSORPTION-SPECTRA OF MODULATION-DOPED QUANTUM WELLS [J].

LIVESCU, G ;

MILLER, DAB ;

CHEMLA, DS ;

RAMASWAMY, M ;

CHANG, TY ;

SAUER, N ;

GOSSARD, AC ;

ENGLISH, JH .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1988, 24 (08) :1677-1689

[8] OPTICAL PROCESSES OF 2D ELECTRON-PLASMA IN GAAS-(ALGA) AS HETEROSTRUCTURES [J].

PINCZUK, A ;

SHAH, J ;

MILLER, RC ;

GOSSARD, AC ;

WIEGMANN, W .

SOLID STATE COMMUNICATIONS, 1984, 50 (08) :735-739

[9] INFRARED AND POLARIZATION ANOMALIES IN THE OPTICAL-SPECTRA OF MODULATION-DOPED SEMICONDUCTOR QUANTUM-WELL STRUCTURES [J].

RUCKENSTEIN, AE ;

SCHMITTRINK, S ;

MILLER, RC .

PHYSICAL REVIEW LETTERS, 1986, 56 (05) :504-507

[10] MANY-BODY EFFECTS IN THE ABSORPTION, GAIN, AND LUMINESCENCE SPECTRA OF SEMICONDUCTOR QUANTUM-WELL STRUCTURES [J].

SCHMITTRINK, S ;

ELL, C ;

HAUG, H .

PHYSICAL REVIEW B, 1986, 33 (02) :1183-1189