FACTORS DETERMINING THE OXYGEN CONTENT OF LIQUID SILICON AT ITS MELTING POINT

被引：39

作者：

KAISER, W

BRESLIN, J

机构：

来源：

关键词：

D O I：

10.1063/1.1723428

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1292 / 1294

页数：3

共 21 条

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[2] CHAPMAN, 1939, MATH THEORY NONUNIFO
[3] DEBYE PP, 1957, B AM PHYS SOC 2, V2, P66
[4] EMEIS R, 1954, Z NATURFORSCH A, V9, P67
[5] FULLER, 1954, PHYS REV, V96, P833
[6] FULLER, 1955, ACTA MET, V3, P96
[7] EFFECT OF HEAT TREATMENT UPON THE ELECTRICAL PROPERTIES OF SILICON CRYSTALS
FULLER, CS
LOGAN, RA
[J]. JOURNAL OF APPLIED PHYSICS, 1957, 28 (12) : 1427 - 1436
[8] GREEN, 1957, J ELECTRONICS, V3, P171
[9] INFRARED ABSORPTION OF OXYGEN IN SILICON
HROSTOWSKI, HJ
KAISER, RH
[J]. PHYSICAL REVIEW, 1957, 107 (04): : 966 - 972
[10] ELECTRICAL AND OPTICAL PROPERTIES OF HEAT-TREATED SILICON
KAISER, W
[J]. PHYSICAL REVIEW, 1957, 105 (06): : 1751 - 1756