ELECTRICAL RESISTIVITY OF TUNGSTEN FILMS PREPARED BY WF6 REDUCTION

被引：14

作者：

MAYADAS, AF

CUOMO, JJ

ROSENBERG, R

机构：

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1969年 / 116卷 / 12期

关键词：

D O I：

10.1149/1.2411692

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

This note is concerned with a study of tungsten films prepared by hydrogen reduction of tungsten hexafluoride. The observations reported here are of large-area epitaxy of tungsten on sapphire. A significant conclusion of the present work is that the high resistivity in the polycrystalline tungsten films is not due to impurities but to grain-boundary scattering of electrons, since polycrystalline and single-crystal films deposited simultaneously have quits different resistive characteristics.

引用

页码：1742 / +

页数：1

共 9 条

[1]

CAMPBELL DS, 1966, USE THIN FILMS PHYSI, P315

[2] FERMI SURFACE AREAS OF CHROMIUM, MOLYBDENUM AND TUNGSTEN [J].