LINE-SHAPE OF THE VOLUME PLASMONS OF SILICON AND GERMANIUM

被引：17

作者：

HINZ, HJ

RAETHER, H

机构：

[1] Institut für Angewandte Physik der Universität Hamburg, 2000 Hamburg 36

来源：

THIN SOLID FILMS | 1979年 / 58卷 / 02期

关键词：

D O I：

10.1016/0040-6090(79)90249-9

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The electron energy loss spectra of volume plasmons near the forward direction are reported for silicon and germanium. The peak position ℏωp = 16.9 eV (16.2 eV), the linewidth ℏγ = 3.2 eV (3.1eV) and the height h = 5.3 (5.2) of the loss function of silicon (germanium) are given and it is shown that the shape of the plasmon loss is well reproduced by a nearly free-electron-gas model. © 1979.

引用

页码：281 / 284

页数：4

共 6 条

[1]

Daniels J., 1970, SPRINGER TRACTS MODE, V54, P77

[2] DIE FILTERLINSE ALS MONOCHROMATOR FUR SCHNELLE ELEKTRONEN [J].