READ-ONLY MEMORY USING MAS TRANSISTORS

[1] DILL HG, 1969, INT SOLID STATE CIRC, P44

[2] DOO VY, 1969, MAY EL SOC SPRING M

[3] FLAD FV, 1969, ISSCC DIGEST TECH PA, P46

[4] NAKANUMA S, 1970, ISSCC DIG TECH PAPER, P68

[5] NIGH H, 1968, OCT EL SOC FALL M

[6] CHARGE STORAGE MODEL FOR VARIABLE THRESHOLD FET MEMORY ELEMENT [J]. APPLIED PHYSICS LETTERS, 1969, 14 (02) : 45 - &

[7] TSUJIDE T, 1970, J ELECTROCHEM SOC, V117, P1293

[8] TUNG SK, 1968, OCT EL SOC FALL M

[9] Wallmark J. T., 1969, RCA Review, V30, P335

[1] DILL HG, 1969, INT SOLID STATE CIRC, P44

[2] DOO VY, 1969, MAY EL SOC SPRING M

[3] FLAD FV, 1969, ISSCC DIGEST TECH PA, P46

[4] NAKANUMA S, 1970, ISSCC DIG TECH PAPER, P68

[5] NIGH H, 1968, OCT EL SOC FALL M

[6] CHARGE STORAGE MODEL FOR VARIABLE THRESHOLD FET MEMORY ELEMENT [J]. APPLIED PHYSICS LETTERS, 1969, 14 (02) : 45 - &

[7] TSUJIDE T, 1970, J ELECTROCHEM SOC, V117, P1293

[8] TUNG SK, 1968, OCT EL SOC FALL M

[9] Wallmark J. T., 1969, RCA Review, V30, P335