MICRO-RAMAN SPECTROSCOPY OF ELECTROMIGRATION-INDUCED OXYGEN VACANCY AGGREGATION IN YBA2CU3O7-DELTA

被引：39

作者：

MOECKLY, BH ^{[1
]}

BUHRMAN, RA ^{[1
]}

SULEWSKI, PE ^{[1
]}

机构：

[1] AT&T BELL LABS, MURRAY HILL, NJ 07974 USA

来源：

APPLIED PHYSICS LETTERS | 1994年 / 64卷 / 11期

关键词：

D O I：

10.1063/1.111905

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We describe the results of micro-Raman spectroscopy and optical microscopy studies of basal-plane chain-oxygen vacancy motion in YBa2Cu3O7-delta thin films under the influence of a high current bias near 300 K. Above a threshold level this bias causes vacancy aggregation and then long-range displacement, leading to an enhancement of oxygen order in the region of highest current density and.the complex accumulation of oxygen vacancies in the region where the electromigration force is near the threshold level.

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页码：1427 / 1429

页数：3

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