ON THE DESIGN OF A SILICON JUNCTION RADIATION DETECTOR MADE BY ION DRIFT

被引：4

作者：

GIBBONS, PE

机构：

来源：

NUCLEAR INSTRUMENTS & METHODS | 1962年 / 16卷 / 02期

关键词：

D O I：

10.1016/0029-554X(62)90128-3

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

引用

页码：284 / 286

页数：3

共 5 条

[1] THICK JUNCTION RADIATION DETECTORS MADE BY ION DRIFT [J].

ELLIOTT, JH .

NUCLEAR INSTRUMENTS & METHODS, 1961, 12 (01) :60-66

[2]

MAYER JW, 1961, C NUCLEAR ELECTRONIC

[3] STUDY OF LI-O INTERACTION IN SI BY ION DRIFT [J].

PELL, EM .

[4] ION DRIFT IN AN N-P JUNCTION [J].

PELL, EM .

PELL, EM ;

HAM, FS .