SWITCHING AND MEMORY CHARACTERISTICS OF ZNSE-GE HETEROJUNCTIONS

[1] BOWERS HC, 1970, IEEE T ELECTRON EDVI, VED17, P971

[2] DETERMINATION OF ELECTRON TRAPPING PARAMETERS [J]. JOURNAL OF APPLIED PHYSICS, 1966, 37 (01) : 21 - &

[3] Bube RH., 1960, PHOTOCONDUCTIVITY SO

[4] ELECTRIC FIELD EFFECTS IN TRAPPING PROCESSES [J]. JOURNAL OF APPLIED PHYSICS, 1966, 37 (07) : 2797 - &

[5] HAMAKAWA Y, 1970, 2 P C SOL STAT DEV T

[6] BISTABLE SWITCHING IN NIOBIUM OXIDE DIODES [J]. APPLIED PHYSICS LETTERS, 1965, 6 (06) : 106 - &

[7] HIATT WR, 1970, SOLID STATE ELECTRON, V13, P1033

[8] MISFIT DISLOCATIONS IN SEMICONDUCTORS [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1966, 27 (6-7) : 1053 - +

[9] SWITCHING AND MEMORY IN ZNSE-GE HETEROJUNCTIONS [J]. APPLIED PHYSICS LETTERS, 1970, 17 (04) : 141 - &

[10] EPITAXY OF ZNSE ON GE GAAS AND ZNSE BY AN HCL CLOSE-SPACED TRANSPORT PROCESS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1969, 116 (06) : 843 - &

[1] BOWERS HC, 1970, IEEE T ELECTRON EDVI, VED17, P971

[2] DETERMINATION OF ELECTRON TRAPPING PARAMETERS [J]. JOURNAL OF APPLIED PHYSICS, 1966, 37 (01) : 21 - &

[3] Bube RH., 1960, PHOTOCONDUCTIVITY SO

[4] ELECTRIC FIELD EFFECTS IN TRAPPING PROCESSES [J]. JOURNAL OF APPLIED PHYSICS, 1966, 37 (07) : 2797 - &

[5] HAMAKAWA Y, 1970, 2 P C SOL STAT DEV T

[6] BISTABLE SWITCHING IN NIOBIUM OXIDE DIODES [J]. APPLIED PHYSICS LETTERS, 1965, 6 (06) : 106 - &

[7] HIATT WR, 1970, SOLID STATE ELECTRON, V13, P1033

[8] MISFIT DISLOCATIONS IN SEMICONDUCTORS [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1966, 27 (6-7) : 1053 - +

[9] SWITCHING AND MEMORY IN ZNSE-GE HETEROJUNCTIONS [J]. APPLIED PHYSICS LETTERS, 1970, 17 (04) : 141 - &

[10] EPITAXY OF ZNSE ON GE GAAS AND ZNSE BY AN HCL CLOSE-SPACED TRANSPORT PROCESS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1969, 116 (06) : 843 - &