ENHANCED DIFFUSION OF DOPANTS AT CONCENTRATIONS NEAR THE SOLUBILITY LIMIT

被引:21
作者
ANTONCIK, E
机构
[1] University of Aarhus, Aarhus
关键词
D O I
10.1149/1.2059376
中图分类号
O646 [电化学、电解、磁化学];
学科分类号
081704 ;
摘要
When discussing diffusion processes of dopants at very high concentrations, i.e., close to their solubility limit, it is absolutely necessary to take into account the fact that the number of substitutional sites accessible to additional donors/acceptors is decreasing or equal to zero when their concentration approaches/exceeds the solubility limit. It turns out that this results in a largely enhanced diffusion at dopant concentrations comparable with their solubility limit. Furthermore, for simple diffusion mechanisms it is possible to derive an analytical expression for the effective diffusion coefficient, depending on the dopant concentration, which can be used in process modeling.
引用
收藏
页码:3593 / 3595
页数:3
相关论文
共 17 条
[1]   THE INFLUENCE OF THE SOLUBILITY LIMIT ON DIFFUSION OF PHOSPHORUS AND ARSENIC INTO SILICON [J].
ANTONCIK, E .
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1994, 58 (02) :117-123
[2]   THE INFLUENCE OF THE SOLUBILITY LIMIT ON DIFFUSION OF AS IMPLANTS IN SILICON [J].
ANTONCIK, E .
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1993, 56 (04) :291-298
[3]   ON THE THEORY OF TRANSIENT ENHANCED DIFFUSION IN BORON-IMPLANTED SILICON [J].
ANTONCIK, E .
RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1991, 116 (04) :375-387
[4]   ON THE THEORY OF ENHANCED DIFFUSION IN HIGH-TEMPERATURE ANTIMONY-IMPLANTED SILICON [J].
ANTONCIK, E .
RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1993, 127 (01) :75-82
[5]   THEORY OF DIFFUSION-PROCESSES IN IMPLANTED SILICON [J].
ANTONCIK, E .
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1993, 80-1 :998-1001
[6]   DIFFUSION PHENOMENA IN SB-IMPLANTED SILICON [J].
ANTONCIK, E .
RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1993, 125 (04) :355-363
[7]   ANOMALOUS TRANSIENT TAIL DIFFUSION IN BORON-IMPLANTED SILICON [J].
ANTONCIK, E .
RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1991, 118 (04) :371-381
[8]  
ANTONCIK E, IN PRESS
[9]  
ANTONCIK E, 1993, 1ST P INT RAP THERM, P205
[10]   THEORY OF ANOMALOUS DIFFUSION IN SOLIDS NEAR DIFFUSANT SATURATION CONCENTRATIONS - EXAMPLE - PHOSPHORUS IN SILICON - REPLY [J].
BAKEMAN, PE ;
BORREGO, JM .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1970, 117 (12) :1588-&