THRESHOLD BEHAVIOR IN SINGLE-PHOTON DOUBLE IONIZATION OF ARGON

被引：86

作者：

LABLANQUIE, P

ELAND, JHD

NENNER, I

MORIN, P

DELWICHE, J

HUBINFRANSKIN, MJ

机构：

[1] PHYS CHEM LAB,OXFORD OX1 3QZ,ENGLAND

[2] CENS,DEPT PHYSICOCHIM,F-91191 GIF SUR YVETTE,FRANCE

[3] UNIV LIEGE,INST CHIM,SART TILMAN,BELGIUM

来源：

PHYSICAL REVIEW LETTERS | 1987年 / 58卷 / 10期

关键词：

D O I：

10.1103/PhysRevLett.58.992

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：992 / 995

页数：4

共 22 条

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[4] CORRECTION
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[7] ELECTRON-IMPACT IONIZATION OF HELIUM - A MEASUREMENT OF (E,2E) DIFFERENTIAL CROSS-SECTIONS CLOSE TO THRESHOLD
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[8] DOUBLE ESCAPE OF 2 ELECTRONS AT THRESHOLD - DEPENDENCE ON L, S, AND PI
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[9] EFFECT OF SYMMETRY ON 2-ELECTRON ESCAPE AT THRESHOLD
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[J]. JOURNAL OF PHYSICS B-ATOMIC MOLECULAR AND OPTICAL PHYSICS, 1983, 16 (01) : 99 - 106
[10] ENERGY PARTITIONING IN NEAR-THRESHOLD EXCITATION AND IONIZATION OF HELIUM BY ELECTRON-IMPACT
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KING, GC
[J]. JOURNAL OF PHYSICS B-ATOMIC MOLECULAR AND OPTICAL PHYSICS, 1985, 18 (05) : L141 - L148

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