PHOTOLUMINESCENCE SPECTRA AND CARRIER MOBILITIES IN POLYCRYSTALLINE FILMS OF CDTE

被引：9

作者：

FIGUEROA, JM ^{[1
]}

SANCHEZSINENCIO, F ^{[1
]}

MENDOZAALVAREZ, JG ^{[1
]}

ZELAYA, O ^{[1
]}

CONTRERASPUENTE, G ^{[1
]}

DIAZGONGORA, A ^{[1
]}

机构：

[1] INST PHYS NUCL,ESCUELA SUPER FIS & MATEMAT,DEPT FIS,MEXICO CITY 07738,DF,MEXICO

来源：

JOURNAL OF CRYSTAL GROWTH | 1990年 / 106卷 / 04期

关键词：

D O I：

10.1016/0022-0248(90)90039-N

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

The radiative defect density, as determined by low temperature photoluminescence, measured in CdTe polycrystalline films, is compared with electron and hole lateral mobilities measured on the same films. This comparison shows that intracrystalline and/or intercrystalline density of defects is more important in large grain films than in small grain films. In any case charge carrier transport in the films is a trap-charge-controlled process.

引用

页码：651 / 656

页数：6

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