EFFECT OF SURFACE INDEX AND ATOMIC ORDER ON THE GAAS-OXYGEN INTERACTION

被引：29

作者：

MARK, P

CREIGHTON, WF

机构：

[1] Department of Electrical Engineering, Princeton University, Princeton

来源：

THIN SOLID FILMS | 1979年 / 56卷 / 1-2期

关键词：

D O I：

10.1016/0040-6090(79)90049-X

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Optical ellipsometry, Auger electron spectroscopy and low energy electron diffraction were applied to determine the initial sticking coefficient S0 and the interaction kinetics of oxygen and atomically ordered and disordered (110), (111) and (111) surfaces of GaAs. The activation energy of S0 for disordered surfaces was obtained. This information is used to suggest a surface disorder mechanism for oxygen interaction with these surfaces. © 1979.

引用

页码：19 / 38

页数：20