PLANAR PLASMA-ETCHING OF POLYSILICON USING CCL4 AND NF3

[1] PLASMA-ETCHING - DISCUSSION OF MECHANISMS [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (02): : 391 - 403

[2] SF6, A PREFERABLE ETCHANT FOR PLASMA-ETCHING SILICON [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1981, 128 (01) : 123 - 126

[3] EISELE KM, 1980, ELECTROCHEMICAL SOC, P285

[4] GRIFFING BF, 1981, SPIE SEMICONDUCTOR M, V4

[5] HAYES J, 1980, SOLID STATE TECHNOL, V23, P71

[6] IANNO NJ, 1980, EL SOC EXT ABST 0511, P283

[7] PLASMA ETCHING OF SI AND SIO2 - EFFECT OF OXYGEN ADDITIONS TO CF4 PLASMAS [J]. JOURNAL OF APPLIED PHYSICS, 1978, 49 (07) : 3796 - 3803

[8] SCHWARTZ GC, 1980, SOLID STATE TECHNOL, V23, P85

[9] VANDEVEN EPG, 1980, EL SOC EXT ABST 0511, P253

[10] YOUNG MYT, 1980, UNPUB OCT IEEE SOS W

[1] PLASMA-ETCHING - DISCUSSION OF MECHANISMS [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (02): : 391 - 403

[2] SF6, A PREFERABLE ETCHANT FOR PLASMA-ETCHING SILICON [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1981, 128 (01) : 123 - 126

[3] EISELE KM, 1980, ELECTROCHEMICAL SOC, P285

[4] GRIFFING BF, 1981, SPIE SEMICONDUCTOR M, V4

[5] HAYES J, 1980, SOLID STATE TECHNOL, V23, P71

[6] IANNO NJ, 1980, EL SOC EXT ABST 0511, P283

[7] PLASMA ETCHING OF SI AND SIO2 - EFFECT OF OXYGEN ADDITIONS TO CF4 PLASMAS [J]. JOURNAL OF APPLIED PHYSICS, 1978, 49 (07) : 3796 - 3803

[8] SCHWARTZ GC, 1980, SOLID STATE TECHNOL, V23, P85

[9] VANDEVEN EPG, 1980, EL SOC EXT ABST 0511, P253

[10] YOUNG MYT, 1980, UNPUB OCT IEEE SOS W