UNOCCUPIED SURFACE ELECTRONIC-STRUCTURE OF GD(0001)

被引：23

作者：

LI, DL

DOWBEN, PA

ORTEGA, JE

HIMPSEL, FJ

机构：

[1] ARGONNE NATL LAB,DEPT PHYS,ARGONNE,IL 60439

[2] UNIV NEBRASKA,DEPT PHYS,LINCOLN,NE 68588

[3] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598

[4] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598

来源：

PHYSICAL REVIEW B | 1994年 / 49卷 / 11期

关键词：

D O I：

10.1103/PhysRevB.49.7734

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The unoccupied surface electronic structure of Gd(0001) was investigated with high-resolution inverse-photoemission spectroscopy. An empty surface state near E(F) is observed at GAMMABAR. Two other surface-sensitive features are also revealed at 1.2 and 3.1 eV above the Fermi level. Hydrogen adsorption on Gd surfaces was used to distinguish the surface-sensitive features from the bulk features. The unoccupied bulk-band critical points are determined to be GAMMA3+ at 1.9 eV and A1 at 0.8 eV.

引用

页码：7734 / 7738

页数：5

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