THE ELECTRICAL CHARACTERISTICS OF POLYSILICON OXIDE GROWN IN PURE N2O

被引：22

作者：

LAI, CS ^{[1
]}

LEI, TF ^{[1
]}

LEE, CL ^{[1
]}

机构：

[1] NATL CHIAO TUNG UNIV,INST ELECTR,HSINCHU 300,TAIWAN

来源：

IEEE ELECTRON DEVICE LETTERS | 1995年 / 16卷 / 09期

关键词：

Charge-to-breakdown - Electron trapping - Fowler-Nordheim stress - Oxidant - Polyoxide;

D O I：

10.1109/55.406796

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

N2O was used to grow silicon polyoxide. It was found that the N2O-grown polyoxide had a lower leakage current but a higher breakdown field when the top-electrode was positively biased, This is opposite to that of conventional O-2-grown polyoxide. Moreover, it had less electron trapping when stressed and a larger charge-to-breakdown.

引用

页码：385 / 386

页数：2