DISAPPEARANCE OF IMPURITY LEVELS IN SILICON AND GERMANIUM DUE TO SCREENING

被引：20

作者：

LOWNEY, JR

KAHN, AH

BLUE, JL

WILSON, CL

机构：

来源：

关键词：

D O I：

10.1063/1.329256

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：4075 / 4080

页数：6

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