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QUASI-EQUILIBRIUM THERMALLY STIMULATED CURRENT PROCESS
被引:3
作者
:
ANDERSON, JC
论文数:
0
引用数:
0
h-index:
0
机构:
IMPERIAL COLL,DEPT ELECT ENGN,MAT SECT,LONDON SW7 2BT,ENGLAND
IMPERIAL COLL,DEPT ELECT ENGN,MAT SECT,LONDON SW7 2BT,ENGLAND
ANDERSON, JC
[
1
]
NORIAN, KH
论文数:
0
引用数:
0
h-index:
0
机构:
IMPERIAL COLL,DEPT ELECT ENGN,MAT SECT,LONDON SW7 2BT,ENGLAND
IMPERIAL COLL,DEPT ELECT ENGN,MAT SECT,LONDON SW7 2BT,ENGLAND
NORIAN, KH
[
1
]
机构
:
[1]
IMPERIAL COLL,DEPT ELECT ENGN,MAT SECT,LONDON SW7 2BT,ENGLAND
来源
:
SOLID-STATE ELECTRONICS
|
1977年
/ 20卷
/ 04期
关键词
:
D O I
:
10.1016/0038-1101(77)90118-6
中图分类号
:
TM [电工技术];
TN [电子技术、通信技术];
学科分类号
:
0808 ;
0809 ;
摘要
:
引用
收藏
页码:335 / 342
页数:8
相关论文
共 3 条
[1]
THERMAL IONIZATION OF TRAPPED ELECTRONS
KUBO, R
论文数:
0
引用数:
0
h-index:
0
KUBO, R
[J].
PHYSICAL REVIEW,
1952,
86
(06):
: 929
-
937
[2]
EVALUATION OF ELECTRON TRAPPING PARAMETERS FROM CONDUCTIVITY GLOW CURVES IN CADMIUM SULPHIDE
NICHOLAS, KH
论文数:
0
引用数:
0
h-index:
0
NICHOLAS, KH
WOODS, J
论文数:
0
引用数:
0
h-index:
0
WOODS, J
[J].
BRITISH JOURNAL OF APPLIED PHYSICS,
1964,
15
(07):
: 783
-
&
[3]
THEORY OF NON-STEADY-STATE INTERFACIAL THERMAL CURRENTS IN MOS DEVICES, AND DIRECT DETERMINATION OF INTERFACIAL TRAP PARAMETERS
SIMMONS, JG
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV TORONTO,ELECT ENGN DEPT,TORONTO,ONTARIO,CANADA
UNIV TORONTO,ELECT ENGN DEPT,TORONTO,ONTARIO,CANADA
SIMMONS, JG
TAYLOR, GW
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV TORONTO,ELECT ENGN DEPT,TORONTO,ONTARIO,CANADA
UNIV TORONTO,ELECT ENGN DEPT,TORONTO,ONTARIO,CANADA
TAYLOR, GW
[J].
SOLID-STATE ELECTRONICS,
1974,
17
(02)
: 125
-
130
←
1
→
共 3 条
[1]
THERMAL IONIZATION OF TRAPPED ELECTRONS
KUBO, R
论文数:
0
引用数:
0
h-index:
0
KUBO, R
[J].
PHYSICAL REVIEW,
1952,
86
(06):
: 929
-
937
[2]
EVALUATION OF ELECTRON TRAPPING PARAMETERS FROM CONDUCTIVITY GLOW CURVES IN CADMIUM SULPHIDE
NICHOLAS, KH
论文数:
0
引用数:
0
h-index:
0
NICHOLAS, KH
WOODS, J
论文数:
0
引用数:
0
h-index:
0
WOODS, J
[J].
BRITISH JOURNAL OF APPLIED PHYSICS,
1964,
15
(07):
: 783
-
&
[3]
THEORY OF NON-STEADY-STATE INTERFACIAL THERMAL CURRENTS IN MOS DEVICES, AND DIRECT DETERMINATION OF INTERFACIAL TRAP PARAMETERS
SIMMONS, JG
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV TORONTO,ELECT ENGN DEPT,TORONTO,ONTARIO,CANADA
UNIV TORONTO,ELECT ENGN DEPT,TORONTO,ONTARIO,CANADA
SIMMONS, JG
TAYLOR, GW
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV TORONTO,ELECT ENGN DEPT,TORONTO,ONTARIO,CANADA
UNIV TORONTO,ELECT ENGN DEPT,TORONTO,ONTARIO,CANADA
TAYLOR, GW
[J].
SOLID-STATE ELECTRONICS,
1974,
17
(02)
: 125
-
130
←
1
→