QUANTITATIVE CALCULATION OF SIC POLYTYPES FROM MEASUREMENTS OF X-RAY-DIFFRACTION PEAK INTENSITIES

被引:93
作者
RUSKA, J [1 ]
GAUCKLER, LJ [1 ]
LORENZ, J [1 ]
REXER, HU [1 ]
机构
[1] MAX PLANCK INST MET FORSCH,INST WERKSTOFFWISSENSCH,D-7000 STUTTGART 80,FED REP GER
关键词
D O I
10.1007/BF00551044
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
An experimental determination on powder mixtures of SiC-3C and 6H polytypes using an X-ray goniometer system showed the possibility of quantitative determination of polytype fraction directly from peak intensities. In combination with calculated X-ray intensities of 15R and 4H polytype, the method yields a simple equation system for the relative quantities of SiC polytypes 15R, 6H, 4H and 3C in polycrystalline samples and powder mixtures. © 1979 Chapman and Hall Ltd.
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页码:2013 / 2017
页数:5
相关论文
共 8 条
[1]  
BARTRAM SF, 1975, 75CRD022 GEN EL CO R
[2]   REVISED X-RAY DIFFRACTION LINE INTENSITIES FOR SILICON CARBIDE POLYTYPES [J].
HANNAM, AL ;
SHAFFER, PTB .
JOURNAL OF APPLIED CRYSTALLOGRAPHY, 1969, 2 :45-&
[3]  
MACGILLARRY CH, 1962, INT TABLES XRAY CRYS, V3, P202
[4]  
RUSKA J, 1977, SCI CERAM, V9, P332
[5]  
SCHAFFER PTB, 1969, ACTA CRYSTALLOGR B, V25, P477
[6]  
Thibault NW, 1944, AM MINERAL, V29, P327
[7]  
Thibault NW, 1944, AM MINERAL, V29, P249
[8]  
Wyckoff R. W. G., 1963, CRYST STRUCT, V1, P113