MAGNETORESISTANCE OF A 2-DIMENSIONAL ELECTRON-GAS IN A STRONG PERIODIC POTENTIAL

被引：139

作者：

BETON, PH ^{[1
]}

ALVES, ES ^{[1
]}

MAIN, PC ^{[1
]}

EAVES, L ^{[1
]}

DELLOW, MW ^{[1
]}

HENINI, M ^{[1
]}

HUGHES, OH ^{[1
]}

BEAUMONT, SP ^{[1
]}

WILKINSON, CDW ^{[1
]}

机构：

[1] UNIV GLASGOW,DEPT ELECTR & ELECT ENGN,GLASGOW G12 8QQ,SCOTLAND

来源：

PHYSICAL REVIEW B | 1990年 / 42卷 / 14期

关键词：

D O I：

10.1103/PhysRevB.42.9229

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We have investigated the magnetoresistance of a two-dimensional electron gas subjected to a periodic potential of variable amplitude. The periodic potential, of period 300 nm, is generated with use of a gate deposited over a layer of patterned resist, and its amplitude is controlled by the gate voltage. At low gate voltages, two series of oscillations periodic in inverse magnetic field are observed. One series, at low magnetic field, is due to the periodic potential and the other is the usual Shubnikov de Haas oscillations. The application of a small gate voltage generates an increase in the amplitude of the low-field oscillations, followed by a quenching of these oscillations as the gate voltage is increased further. In addition, a low-field positive magnetoresistance is generated, becoming larger with increasing gate voltage. These effects are explained within a semiclassical model of electron transport. Also the Shubnikov de Haas oscillations quench as the amplitude of the potential increases. This is explained in terms of a broadening of the Landau levels. © 1990 The American Physical Society.

引用

页码：9229 / 9232

页数：4

共 8 条

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