PHOTOLUMINESCENCE EXCITATION SPECTROSCOPY IN A-SI-H - EVIDENCE FOR PHONON-ASSISTED ABSORPTION

被引：13

作者：

GU, SQ

RAIKH, ME

TAYLOR, PC

机构：

[1] Department of Physics, University of Utah, Salt Lake City

来源：

PHYSICAL REVIEW LETTERS | 1992年 / 69卷 / 18期

关键词：

D O I：

10.1103/PhysRevLett.69.2697

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Photoluminescence in a-Si:H has been investigated using optical excitation energies E(x) varying from 1.27 to 2.0 eV. At low temperatures (T < 100 K) a strong dependence of both the radiative quantum efficiency and the energy distributions of photoexcited carriers on E(x) has been observed for E(x) < 1.65 eV. At higher temperatures (T > 200 K), the dependence of the energy distribution of carriers on E(x) disappears within a narrow interval of temperature. A model of phonon-assisted absorption is proposed to account for the experimental results.

引用

页码：2697 / 2700

页数：4

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