NEW LOW CURRENT MEMORY MODES WITH GIANT MAGNETORESISTANCE MATERIALS

被引：12

作者：

RANMUTHU, KTM ^{[1
]}

POHM, AV ^{[1
]}

DAUGHTON, JM ^{[1
]}

COMSTOCK, CS ^{[1
]}

机构：

[1] IOWA STATE UNIV SCI & TECHNOL,DEPT ELECT & COMP ENGN,AMES,IA 50011

来源：

IEEE TRANSACTIONS ON MAGNETICS | 1993年 / 29卷 / 06期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1109/20.280853

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Memory cells made with GMR material have substantial differences in resistance for the two storage states even without sense current present. Because of the large outputs, static memory cells requiring reduced currents can be made. Also additional memory modes can be achieved because the resistance change depends on the angle between the magnetization in the two layers rather than the angle between the sense current and the magnetization.

引用

页码：2593 / 2595

页数：3