DESIGN, FABRICATION, AND EVALUATION OF A SILICON JUNCTION FIELD-EFFECT PHOTODETECTOR

被引：2

作者：

BANDY, SG

LINVILL, JG

机构：

[1] VARIAN ASSOC,PALO ALTO,CA 94304

[2] STANFORD UNIV,STANFORD,CA 94305

来源：

关键词：

D O I：

10.1109/T-ED.1973.17747

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：793 / 801

页数：9

共 11 条

[1]

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[2]

BRUGLER JS, 1968, SUSEL68041 STANF EL

[3]

GARY PA, 1967, SUSEL67040 STANF EL

JONES, RC .

PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1959, 47 (09) :1495-1502

[5]

SHIPLEY M, 1964, ELECTRON DES, V12, P76

[6]

SHIPLEY M, 1964, SOLID STATE DES, V5, P28

[7] A UNIPOLAR FIELD-EFFECT TRANSISTOR [J].

SHOCKLEY, W .

PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1952, 40 (11) :1365-1376

SHOCKLEY, W .

BELL SYSTEM TECHNICAL JOURNAL, 1949, 28 (03) :435-489

[9]

TODD CD, 1968, JUNCTION FIELD EFFEC, pCH13

[10]

VANDERZIEL A, 1962, P IRE, V50, P1808