ATOMIC LIFETIMES OF LOW-LYING LEVELS IN MULTIPLY CHARGED IONS OF GALLIUM, GERMANIUM, ARSENIC, AND SELENIUM

被引：53

作者：

SORENSEN, G ^{[1
]}

机构：

[1] UNIV AARHUS,INST PHYS,AARHUS 8000,DENMARK

来源：

PHYSICAL REVIEW A | 1973年 / 7卷 / 01期

关键词：

D O I：

10.1103/PhysRevA.7.85

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

引用

页码：85 / 91

页数：7

共 25 条

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