OXYGEN SEGREGATION IN CZ SILICON CRYSTAL-GROWTH ON APPLYING A HIGH AXIAL MAGNETIC-FIELD

被引：14

作者：

KIM, KM

SMETANA, P

机构：

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1986年 / 133卷 / 08期

关键词：

D O I：

10.1149/1.2108993

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：1682 / 1686

页数：5

共 18 条

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[9] STRIATIONS IN CZ SILICON-CRYSTALS GROWN UNDER VARIOUS AXIAL MAGNETIC-FIELD STRENGTHS [J].

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[10]

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