THE PRODUCTION OF EFG SAPPHIRE RIBBON FOR HETERO-EPITAXIAL SILICON SUBSTRATES

被引：47

作者：

NOVAK, RE

METZL, R

DREEBEN, A

BERKMAN, S

PATTERSON, DL

机构：

[1] RCA CORP,DIV SOLID STATE,MOUNTAINTOP,PA 18707

[2] RCA LABS,PRINCETON,NJ 08540

来源：

JOURNAL OF CRYSTAL GROWTH | 1980年 / 50卷 / 01期

关键词：

D O I：

10.1016/0022-0248(80)90239-0

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：143 / 150

页数：8

共 8 条

[1]

Chalmers B., 1972, Journal of Crystal Growth, V13-14, P84, DOI 10.1016/0022-0248(72)90067-X

[2] GROWTH OF CONTROLLED PROFILE CRYSTALS FROM MELT .3. THEORY [J].

CHALMERS, B ;

LABELLE, HE ;

MLAVSKY, AI .

MATERIALS RESEARCH BULLETIN, 1971, 6 (08) :681-&

[3]

Cullen G. W., 1978, Heteroepitaxial semiconductors for electronic devices, P6

[4]

ISHIBITSU K, 1979, COMMUNICATION

[5] GROWTH OF CONTROLLED PROFILE CRYSTALS FROM MELT .1. -SAPPHIRE FILAMENTS [J].

LABELLE, HE ;

MLAVSKY, AI .

MATERIALS RESEARCH BULLETIN, 1971, 6 (07) :571-&

[6] GROWTH OF CONTROLLED PROFILE CRYSTALS FROM MELT .2. EDGE-DEFINED, FILM-FED GROWTH (EFG) [J].

LABELLE, HE .

MATERIALS RESEARCH BULLETIN, 1971, 6 (07) :581-&

[7]

SATUNKIN GA, 1976, IZV AN SSSR FIZ+, V40, P1492

[8] INTERFACE GROWTH FEATURE AND VOIDS IN SAPPHIRE RIBBON CRYSTALS [J].

WADA, K ;

HOSHIKAWA, K .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1978, 17 (02) :449-450

← 1 →