REGULAR PULSING OF GALLIUM-ARSENIDE-DIODE LASER

被引：4

作者：

MOHN, E

机构：

[1] Institut für Angewandte Physik Universität Bern, 3000 Bern

来源：

ELECTRONICS LETTERS | 1969年 / 5卷 / 12期

关键词：

D O I：

10.1049/el:19690200

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A GaAs laser diode has been shown to emit a regular train of pulses as short as 150ps if it is pumped near the threshold by a pulsed direct current and a high-frequency component (100-1000 MHz). This behaviour agrees with results of a numerical analysis of simple rate equations. © 1969, The Institution of Electrical Engineers. All rights reserved.

引用

页码：261 / &