AN EXTENDED PROOF OF THE RAMO-SHOCKLEY THEOREM

被引:73
作者
KIM, H [1 ]
MIN, HS [1 ]
TANG, TW [1 ]
PARK, YJ [1 ]
机构
[1] SEOUL NATL UNIV,INTER UNIV SEMICOND RES CTR,SEOUL 151742,SOUTH KOREA
关键词
D O I
10.1016/0038-1101(91)90065-7
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
An introduction of a new functional form of Green's theorem for inhomogeneous media has enabled us to show that the Ramo-Shockley theorem derived for inhomogeneous media with electrodes maintained at constant potentials is still valid even when the electrode potentials are time-varying. Our proof, which is based on this modified Green's theorem, is an extension of Ramo's original proof and is different from the energy balance method which is the existing method of proof of the theorem for inhomogeneous media at constant electrode potentials. Our proof provides a basis for calculations of the instantaneous currents in semiconductor devices using particle simulations such as the Monte-Carlo method since it differentiates clearly the current induced in the electrodes due to the moving charges from the current caused by the time-varying potentials of the electrodes through capacitive couplings among the electrodes.
引用
收藏
页码:1251 / 1253
页数:3
相关论文
共 15 条
[1]   ON THE INDUCED CHARGE IN SEMICONDUCTOR DETECTORS [J].
CAVALLERI, G ;
FABRI, G ;
GATTI, E ;
SVELTO, V .
NUCLEAR INSTRUMENTS & METHODS, 1963, 21 (01) :177-178
[2]   EXTENSION OF RAMOS THEOREM AS APPLIED TO INDUCED CHARGE IN SEMICONDUCTOR DETECTORS [J].
CAVALLERI, G ;
GATTI, E ;
FABRI, G ;
SVELTO, V .
NUCLEAR INSTRUMENTS & METHODS, 1971, 92 (01) :137-+
[3]   COMMENTS ON THE COLLECTIVE AND CORPUSCULAR APPROACH OF GENERATION RECOMBINATION NOISE IN A P-N-JUNCTION [J].
DABROWSKI, W .
SOLID-STATE ELECTRONICS, 1987, 30 (02) :205-208
[4]  
DESPHANDE RY, 1970, NUCL INSTRUM METHODS, V82, P51
[5]   THE VALIDITY OF RAMOS THEOREM [J].
DEVISSCHERE, P .
SOLID-STATE ELECTRONICS, 1990, 33 (04) :455-459
[6]   SEMICONDUCTOR DETECTORS FOR NUCLEAR SPECTROMETRY [J].
GOULDING, FS .
NUCLEAR INSTRUMENTS & METHODS, 1966, 43 (01) :1-+
[7]  
JIN GY, 1991, 1991 INT WORKSH VLSI
[8]   NOISE DUE TO GENERATION AND RECOMBINATION OF CARRIERS IN P-N JUNCTION TRANSITION REGIONS [J].
LAURITZEN, PO .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1968, ED15 (10) :770-+
[9]  
MARTINI M, 1963, NUCL INSTRUM METHODS, V67, P177
[10]  
Nougier J. P., 1980, Physics of Nonlinear Transport in Semiconductors. Proceedings of the NATO Advanced Study Institute on Physics of Nonlinear Electron Transport, P415