CORRELATION OF RELATIVE INTENSITY NOISE WITH LINEWIDTH FLOORS IN NARROW LINEWIDTH DFB LASERS

被引：8

作者：

SUNDARESAN, H

FLETCHER, NC

机构：

[1] British Telecom Research Laboratories, Ipswich, Martlesham Heath

来源：

ELECTRONICS LETTERS | 1990年 / 26卷 / 24期

关键词：

Noise; Semiconductor lasers;

D O I：

10.1049/el:19901294

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The relative intensity noise of narrow linewidth DFB lasers in the vicinity of linewidth floors was measured. A strong correlation between linewidth rebroadening and a corresponding increase in the relative intensity noise for frequencies below 3 GHz was observed for devices with mode suppression ratios in excess of 35 dB. © 1990, The Institution of Electrical Engineers. All rights reserved.

引用

页码：2002 / 2003

页数：2

共 7 条

[1] THE SEMICONDUCTOR-LASER LINEWIDTH DUE TO THE PRESENCE OF SIDE MODES [J].