CURRENT-VOLTAGE CHARACTERISTICS OF INSB AT ROOM-TEMPERATURE AND HIGH HYDROSTATIC-PRESSURE

被引:7
作者
DOBROVOLSKIS, Z [1 ]
KROTKUS, A [1 ]
POZELA, J [1 ]
ASAUSKAS, R [1 ]
机构
[1] A SNECHKUS POLYTECH INST,KAUNAS,LISSR
来源
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1980年 / 59卷 / 02期
关键词
D O I
10.1002/pssa.2210590234
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
引用
收藏
页码:689 / 696
页数:8
相关论文
共 29 条
[1]   CALCULATION OF ENERGY-BAND PRESSURE COEFFICIENTS FROM DIELECTRIC THEORY OF CHEMICAL BOND [J].
CAMPHAUSEN, DL ;
CONNELL, GAN ;
PAUL, W .
PHYSICAL REVIEW LETTERS, 1971, 26 (04) :184-+
[2]   SCATTERING OF ELECTRONS BY DEFORMATION POTENTIAL IN DOPED INSB [J].
DEMCHUK, KM ;
TSIDILKOVSKII, IM .
PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1977, 82 (01) :59-67
[3]   NEGATIVE DIFFERENTIAL CONDUCTIVITY IN HYDROSTATICALLY PRESSED INDIUM-ANTIMONIDE AT ROOM-TEMPERATURE [J].
DOBROVOLSKIS, Z ;
KROTKUS, A ;
POZELA, J .
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1978, 50 (01) :K73-K75
[4]   ELECTRON SCATTERING IN INSB [J].
EHRENREICH, H .
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1957, 2 (02) :131-149
[5]   PRESSURE AND COMPOSITION DEPENDENCE OF HIGH-FIELD INSTABILITIES IN IN AS1-XPX ALLOYS [J].
ELSABBAHY, A ;
ADAMS, AR ;
YOUNG, ML .
SOLID-STATE ELECTRONICS, 1978, 21 (01) :83-90
[6]   NEGATIVE DIFFERENTIAL MOBILITY IN INDIUM ANTIMONIDE [J].
FAWCETT, W ;
RUCH, JG .
APPLIED PHYSICS LETTERS, 1969, 15 (11) :368-&
[7]   HEAVILY DOPED CRYSTALS OF N-TYPE INDIUM-ANTIMONIDE [J].
FILIPCHENKO, AS ;
NASLEDOV, DN .
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1975, 27 (01) :11-26
[8]   PRESSURE DEPENDENCE OF RESISTIVITY OF INDIUM ANTIMONIDE TO 70,000 ATMOSPHERES [J].
GEBBIE, HA ;
SMITH, PL ;
AUSTIN, IG ;
KING, JH .
NATURE, 1960, 188 (4756) :1095-1096
[9]  
Hrivnak L., 1978, Acta Physica Slovaca, V28, P236
[10]  
HUBNER K, 1972, CZECH J PHYS B, V22, P842