GRADED-BANDGAP SIGE BIPOLAR-TRANSISTOR FABRICATED WITH GERMANIUM ION-IMPLANTATION

被引：23

作者：

FUKAMI, A

SHOJI, K

NAGANO, T

TOKUYAMA, T

YANG, CY

机构：

[1] Hitachi Research Laboratory, Hitachi, Ltd., Hitachi-shi, Ibaraki-ken, 319-12

[2] Institute of Applied Physics, University of Tsukuba, Tsukuba-shi, Ibaraki-ken, 305

[3] Microelectronics Laboratory, Santa Clara University, Santa Clara

来源：

MICROELECTRONIC ENGINEERING | 1991年 / 15卷 / 1-4期

关键词：

D O I：

10.1016/0167-9317(91)90173-B

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A graded-bandgap SiGe heterojunction bipolar transistor (HBT) is fabricated using Ge+ implantation. The maximum current gain and the maximum cutoff frequency are 40 and 8 GHz respectively, while those of the Si control device are 100 and 11 GHz. This relatively high cutoff frequency is obtained for the SiGe HBT despite considerable defects in the emitter and base regions, and is attributed to the drift field in the base region resulting from the graded bandgap.

引用

页码：15 / 18

页数：4