BULK AND SURFACE CHARACTERIZATION OF THE SILICON ELECTRODE

[1] [Anonymous], ELECTROCHEMISTRY GER

[2] OPTICAL MEASUREMENT OF FILM GROWTH ON SILICON AND GERMANIUM SURFACES IN ROOM AIR [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1957, 104 (10) : 619 - 622

[3] FORMATION AND PROPERTIES OF POROUS SILICON FILM [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1977, 124 (02) : 285 - 295

[4] BARD AJ, 1977, J AM CHEM SOC, V99, P2848

[5] SCHOTTKY-BARRIER HEIGHT AND REVERSE CURRENT OF THE N-SI-ELECTROLYTE JUNCTION [J]. SURFACE SCIENCE, 1979, 88 (01) : 204 - 220

[6] FLYNN JB, 1958, J ELECTROCHEM SOC, V105, P616

[7] SIMPLE METHOD FOR ESTIMATING ENERGY-LEVELS OF SOLIDS [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (04): : 1042 - 1044

[8] Gerisher H., 1970, PHYSICAL CHEM ADV A, VIX A

[9] GOBELI G.W., 1966, SEMICONDUCTORS SEMIM, V2

[10] Hurd R. M., 1964, ELECTROCHIM ACTA, V9, P1633

[1] [Anonymous], ELECTROCHEMISTRY GER

[2] OPTICAL MEASUREMENT OF FILM GROWTH ON SILICON AND GERMANIUM SURFACES IN ROOM AIR [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1957, 104 (10) : 619 - 622

[3] FORMATION AND PROPERTIES OF POROUS SILICON FILM [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1977, 124 (02) : 285 - 295

[4] BARD AJ, 1977, J AM CHEM SOC, V99, P2848

[5] SCHOTTKY-BARRIER HEIGHT AND REVERSE CURRENT OF THE N-SI-ELECTROLYTE JUNCTION [J]. SURFACE SCIENCE, 1979, 88 (01) : 204 - 220

[6] FLYNN JB, 1958, J ELECTROCHEM SOC, V105, P616

[7] SIMPLE METHOD FOR ESTIMATING ENERGY-LEVELS OF SOLIDS [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (04): : 1042 - 1044

[8] Gerisher H., 1970, PHYSICAL CHEM ADV A, VIX A

[9] GOBELI G.W., 1966, SEMICONDUCTORS SEMIM, V2

[10] Hurd R. M., 1964, ELECTROCHIM ACTA, V9, P1633