SEMICONDUCTOR PROPERTIES OF AMORPHOUS C-SN THIN-FILMS

被引：2

作者：

MPAWENAYO, P ^{[1
]}

DEMICHELIS, F ^{[1
]}

RAVA, P ^{[1
]}

TAGLIAFERRO, A ^{[1
]}

TRESSO, E ^{[1
]}

KANIADAKIS, G ^{[1
]}

机构：

[1] CNR, UR 24, GRP NAZL STRUTTURA MAT, TURIN, ITALY

来源：

THIN SOLID FILMS | 1987年 / 146卷 / 03期

关键词：

ProfessorP . Mazzettio f the IstitutoE lettrotecnicNoa zionaleG alileoFerraris is acknowledgefdo r his assistancien the conductivitmy easurements. The InternationaCl entref or TheoreticaPl hysics; T rieste; I taly; is acknowledged by P. Mpawenayo(w ho is on leavef romthe Universit6N ationaled u Rwanda CEAER BP117; Butare Rwanda)f or a grant from the Programf or Researcha nd Trainingi n Italian Laboratories;

D O I：

10.1016/0040-6090(87)90439-1

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：L19 / L22

页数：4

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[2]

FRITZSCHE H, 1978, SOLID STATE TECHNOL, V21, P55

[3]

IZOTAKI H, 1983, J NONCRYST SOLIDS, V59, P589

[4]

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[5] EVIDENCE FOR GRAPHITIC-TYPE BONDING IN GLOW-DISCHARGE HYDROGENATED AMORPHOUS-SILICON CARBON ALLOYS [J].