HIGHLY CONDUCTIVE LAYER IN EPITAXIAL ZNO FILMS GROWN BY CVD

被引：2

作者：

KASUGA, M

ISHIHARA, S

机构：

[1] Department of Electronics, Faculty of Engineering, Yamanashi University

来源：

关键词：

D O I：

10.1143/JJAP.18.673

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

[No abstract available]

引用

页码：673 / 674

页数：2

共 7 条

[1]

DIMOVAALIAKOVA DI, 1976, THIN SOLID FILMS, V36, P179, DOI 10.1016/0040-6090(76)90435-1

[2] EPITAXIAL ZNO ON SAPPHIRE [J].

GALLI, G ;

COKER, JE .

KASUGA, M ;

ISHIHARA, S .

[4]

RABADANO.RA, 1970, FIZ TVERD TELA+, V12, P1124

[5]

Reisman A., 1973, Journal of Electronic Materials, V2, P177, DOI 10.1007/BF02666151

[6]

van der Pauw L. J., 1958, PHILIPS RES REP, V1958, P1

[7] HALL-EFFECT AND ANISOTROPY OF ELECTRON-MOBILITY IN ZNO [J].

WAGNER, P ;

HELBIG, R .