VALLEY SPLITTING IN THE SILICON INVERSION LAYER - MISORIENTATION EFFECTS

被引:43
作者
ANDO, T [1 ]
机构
[1] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
来源
PHYSICAL REVIEW B | 1979年 / 19卷 / 06期
关键词
D O I
10.1103/PhysRevB.19.3089
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The valley splitting is calculated with the use of the electric breakthrough formalism in n-channel inversion layers on slightly misoriented silicon (001) surfaces. The result of Ohkawa and Uemura on the exact (001) surface can be obtained by a simple formula without a tedious numerical calculation and is shown to be essentially equivalent to the result of the surface scattering mechanism recently proposed by Sham and Nakayama. Misorientation effects are enormous and greatly reduce the valley splitting especially in weak magnetic fields, which explains the strange behavior of the valley splitting that it is observed only in strong magnetic fields and disappears in weak fields. © 1979 The American Physical Society.
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页码:3089 / 3095
页数:7
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