TEMPERATURE-DEPENDENCE OF BAND-STRUCTURE OF GERMANIUM-TYPE AND ZINCBLENDE-TYPE SEMICONDUCTORS

被引：62

作者：

AUVERGNE, D

CAMASSEL, J

MATHIEU, H

CARDONA, M

机构：

[1] UNIV SCI & TECH LANGUEDOC,CNRS,CTR ETUD ELECTR SOLIDES,34060 MONTPELLIER,FRANCE

[2] MAX PLANCK INST FESTKORPERFORSCH,STUTTGART,WEST GERMANY

来源：

PHYSICAL REVIEW B | 1974年 / 9卷 / 12期

关键词：

D O I：

10.1103/PhysRevB.9.5168

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：5168 / 5177

页数：10

共 34 条

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