Thin film lithium niobate on sapphire for SAW applications

被引:9
作者
Ho, KS [1 ]
Lin, J [1 ]
Chen, J [1 ]
Rabson, TA [1 ]
机构
[1] MOTOROLA INC, FT LAUDERDALE, FL 33322 USA
关键词
D O I
10.1080/10584589508013592
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Deposition of LiNbO3 thin films on R-cut (<01(1)over bar 2>) sapphire by rf magnetron sputtering has been systematically investigated and repeatable epitaxial relationships between LiNbO3 thin film and sapphire substrate were observed. As a result, the effect of sputtering parameters on deposition of LiNbO3 thin films was determined. Optimal conditions for deposition of high quality (<11(2)over bar 0>), (<01(1)over bar 2>) and (<10(1)over bar 0>) LiNbO3 thin films were found. A filter was successfully fabricated by forming interdigital transducers (IDT) on the surface of a (<10(1)over bar 0>) LiNbO3 thin film on (<01(1)over bar 2>) sapphire. The frequency response curve was measured, and the results are compared with a theoretical model.
引用
收藏
页码:201 / 211
页数:11
相关论文
共 10 条
[1]  
BAUMANN RC, 1990, MATER RES SOC SYMP P, V200, P31, DOI 10.1557/PROC-200-31
[2]   PROPAGATION OF ACOUSTIC SURFACE-WAVES IN MULTILAYERS - MATRIX DESCRIPTION [J].
FAHMY, AH ;
ADLER, EL .
APPLIED PHYSICS LETTERS, 1973, 22 (10) :495-497
[3]   LINBO3 FILM WITH A NEW EPITAXIAL ORIENTATION ON R-CUT SAPPHIRE [J].
FUJIMURA, N ;
KAKINOKI, M ;
TSUBOI, H ;
ITO, T .
JOURNAL OF APPLIED PHYSICS, 1994, 75 (04) :2169-2179
[4]  
Huang C. H.-J., 1992, Integrated Ferroelectrics, V2, P13, DOI 10.1080/10584589208215728
[5]   LOW-LOSS THIN-FILM LINBO3 OPTICAL WAVE-GUIDE SPUTTERED ONTO A SIO2/SI SUBSTRATE [J].
HUANG, CHJ ;
RABSON, TA .
OPTICS LETTERS, 1993, 18 (10) :811-813
[6]   VELOCITY SURFACE MEASUREMENTS FOR ZNO FILMS OVER (001)-CUT GAAS [J].
KIM, YK ;
HUNT, WD ;
LIU, YS ;
JEN, CK .
JOURNAL OF APPLIED PHYSICS, 1994, 76 (03) :1455-1461
[7]  
NATTHEWS H, 1977, SURFACE WAVE FILTERS
[8]   THIN-FILM LITHIUM-NIOBATE ON SILICON [J].
RABSON, TA ;
BAUMANN, RC ;
ROST, TA .
FERROELECTRICS, 1990, 112 :265-271
[9]   FERROELECTRIC SWITCHING OF A FIELD-EFFECT TRANSISTOR WITH A LITHIUM-NIOBATE GATE INSULATOR [J].
ROST, TA ;
LIN, H ;
RABSON, TA .
APPLIED PHYSICS LETTERS, 1991, 59 (27) :3654-3656
[10]  
SHIBATA Y, 1993, JPN J APPL PHYS PT 2, V5, pL745