FAILURE MODES IN SILICON AVALANCHE TRANSIT-TIME MICROWAVE DEVICES

被引:2
作者
SCHENCK, JF
MIDFORD, TA
机构
关键词
D O I
10.1109/T-ED.1967.16019
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:619 / +
页数:1
相关论文
共 6 条
[2]   PHYSICAL INVESTIGATION OF MESOPLASMA IN SILICON [J].
ENGLISH, AC .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1966, ED13 (8-9) :662-+
[3]   MODEL FOR ELECTRICAL BEHAVIOR OF MICROPLASMA [J].
HAITZ, RH .
JOURNAL OF APPLIED PHYSICS, 1964, 35 (05) :1370-&
[4]   MECHANISMS CONTRIBUTING TO NOISE PULSE RATE OF AVALANCHE DIODES [J].
HAITZ, RH .
JOURNAL OF APPLIED PHYSICS, 1965, 36 (10) :3123-&
[5]  
SCHENCK JF, 1967, PHYSICS FAILURE ELEC, V5
[6]  
SHILLIDAY TS, 1967, PHYSICS FAILURE E ED, V5