SPUTTER-DEPOSITION OF [111]-AXIS ORIENTED RHOMBOHEDRAL PZT FILMS AND THEIR DIELECTRIC, FERROELECTRIC AND PYROELECTRIC PROPERTIES

被引：97

作者：

ADACHI, M

MATSUZAKI, T

YAMADA, T

SHIOSAKI, T

KAWABATA, A

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1987年 / 26卷 / 04期

关键词：

D O I：

10.1143/JJAP.26.550

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：550 / 553

页数：4

共 9 条

[1]

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[2]

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[3]

HAMADA H, 1981, T I ELECTRON COMMUN, V64, P47

[4] PREPARATION OF C-AXIS ORIENTED PBTIO3 THIN-FILMS AND THEIR CRYSTALLOGRAPHIC, DIELECTRIC, AND PYROELECTRIC PROPERTIES [J].

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[5] EPITAXIAL-GROWTH OF FERROELECTRIC PLZT [(PB,LA)(ZR,TI)O3] THIN-FILMS [J].

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JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1985, 24 :10-12

[8] EPITAXIAL-GROWTH OF FERROELECTRIC PLZT THIN-FILM AND THEIR OPTICAL-PROPERTIES [J].

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APPLIED PHYSICS, 1980, 21 (04) :339-343

[9] PROPERTIES OF SPUTTER-DEPOSITED PBTIO3, PB(ZR,TI)O3, PB2KNB5O15 FILMS [J].

SHIOSAKI, T ;

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KAWABATA, A .

FERROELECTRICS, 1985, 63 (1-4) :227-234

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