AMORPHOUS-SILICON SUPERLATTICE THIN-FILM TRANSISTORS

被引：22

作者：

TSUKUDE, M

HATA, S

KOHDA, Y

MIYAZAKI, S

HIROSE, M

机构：

来源：

JOURNAL OF NON-CRYSTALLINE SOLIDS | 1987年 / 97-8卷

关键词：

D O I：

10.1016/0022-3093(87)90076-7

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

引用

页码：317 / 320

页数：4

共 10 条

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[2] GROWTH AND STRUCTURE OF LAYERED AMORPHOUS-SEMICONDUCTORS [J].

ABELES, B ;

TIEDJE, T ;

LIANG, KS ;

DECKMAN, HW ;

STASIEWSKI, HC ;

SCANLON, JC ;

EISENBERGER, PM .

JOURNAL OF NON-CRYSTALLINE SOLIDS, 1984, 66 (1-2) :351-356

[3]

Hirose M., 1987, Oyo Buturi, V56, P186

[4] PROPERTIES OF AMORPHOUS SEMICONDUCTING MULTILAYER FILMS [J].

KAKALIOS, J ;

FRITZSCHE, H ;

IBARAKI, N ;

OVSHINSKY, SR .

JOURNAL OF NON-CRYSTALLINE SOLIDS, 1984, 66 (1-2) :339-344

[5]

KRUANGUM D, 1986, 6TH INT C SOL STAT D, P683

[6]

MIYAZAKI S, 1986, 6TH INT C SOL STAT D, P675

[7]

MIYAZAKI S, 1984, 1ST INT PHOT SCI ENG, P425

[8]

TARUI H, 1986, 6TH INT C SOL STAT D, P687

[9]

TSUKUDE M, 1986, JPN J APPL PHYS, V26, pL111

[10]

WRONSKI CR, 1986, APPL PHYS LETT, V49, P596

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