STUDIES ON DECAY OF GE67

The excited levels of Ga67 have been investigated from the decay of Ge67 with Ge(Li), Si(Li), and standard scintillation counters. rays of the following energies were observed: 166.5, 360, 558, 576, 661, 710, 720, 728, 828, 900, 915, 981, 1082, 1116, 1283, 1450, 1677, 1509, 1644, 1810, 1837, 2004, 2100, 2170, 2210, 2510, 2559, 2726, 2958, 2991, 3065, and 3157 keV. The half-life of Ge67 was measured to be 190.3 min. With the help of - coincidence studies, a consistent level scheme of Ga67 at 166.5, 333, 828, 1082, 1450, 1810, 2170, 2726, 3157, and 3398 keV has been obtained. Three major positron groups with end-point energies of 3.18 MeV (65%), 2.5 MeV (25%), and 1.54 MeV (<10%) have been assigned to the decay of Ge67. Each group probably consists of more than one component. The results including spin and parity assignments of some of the excited levels of Ga67 are discussed. The half-life of the 166-keV level is measured by delayed coincidence to be less than (0.220.05) × 10-9 sec. © 1969 The American Physical Society.